The R&D center was led by Academician Chu Junhao. The research uses high-resolution room temperature infrared image acquisition and analysis system, combined with active infrared radiation source system to realize on-line thermal defect detection, effectively improve the detection rate of device defects and improve the thermal stability of the chip.

The R&D center was led by Academician Zhu Shining. Based on photonic crystal laser chips, high-performance all-solid-state and fiber-optic laser systems and applications can be developed to replace and upgrade existing laser systems for chip processing, environmental monitoring, health care, chemical analysis, and scientific research.

The R&D center was established by Academician Hao Yue. Third-generation semiconductor technology based on gallium nitride (GaN) is currently widely used in radar detection, satellite communications, and upcoming 5G base stations. By 2022, the market value will reach 1 billion US dollars. The institute will introduce the earliest system research team engaged in GaN technology, including research on epitaxial material growth, device design and process, chip and power amplification design.

Power semiconductor is a key component of almost all new energy related products, but the heat dissipation problem is the biggest technical obstacle to the development and application of power semiconductors. Every year, hundreds of millions of dollars are invested in solving the problem of power semiconductor thermal design. There is currently a huge demand for high reliability power semiconductor devices. The success of this project will fill the domestic gap and provide the market with the most advanced thermal testing/thermal design solutions to help Chinese companies improve their competitiveness in the field of power semiconductors.